Fabrication Services

Microwave Power Inc. has developed a proprietary Monolithic Ceramic Circuit (MCC) technology specifically optimized for power applications. This technology is also ideally suited for multi-chip module integration of GaAs monolithics. One of the main features of this technology is the ability to insert solid gold vias through the ceramic substrate while maintaining excellent pattern definition in the immediate vicinity of the hole. Other important features are the air bridges, the fine line definition obtained by dry etching, and the excellent step-coverage of the plasma-deposited silicon nitride.

Shown in the photographs below are some details of circuits fabricated with the MCC technology, namely, a cross section of a 10 mil wafer with 10 mil vias, a detail of multiple air bridges, and a multi-chip module prior to the die-attachment of the monolithics.

Cross section of a 10 mil wafer with 10 mil vias

Detail of multiple air bridges

A multi-chip module prior to the die-attachment of the monolithics

Range of main design parameters of the MCC technology

	Technology Limits	Recommended Values
Smallest features (lines or gaps)	5ľ (0.0002")	10ľ (0.0004")
Layer to layer registration	ą5ľ (0.0002")	ą10ľ (0.0004")
Minimum via diameter	100ľ (0.004")	see plot
Maximum via diameter	?	see plot
Minimum via spacing (edge to edge)	?	= diameter
Via to capacitor spacing (edge to edge)	25ľ (0.001")	40ľ (0.0015")
Via to circuit alignment	25ľ (0.001")	40ľ (0.0015")
Via thermal conductance, on 0.010" alumina (W/°C mm²)	1.2	1
Resistor range (Ω/square)	20 - 200	20 -100
Resistor tolerance	ą7%	ą15%
Capacitor range (pF/mm²)	30 - 350	50 - 300
Capacitor tolerance	ą10%	ą15%
Capacitor breakdown (max)	?	30 V
Air bridge span (max)	?	250ľ (0.010")
Air bridge width (min)	12ľ (0.0005")	25ľ (0.001")

Via Diameter (D) vs. Substrate Thickness (T)

Microwave Power Inc.
3350 Scott Blvd, Bldg. 25
Santa Clara, CA 95054
USA
Voice: (408) 727-6666
Fax: (408) 727-2246
Email: info@microwavepower.com